The total power dissipation (written P D in most American datasheets, P tot in European ones) depends on the heatsink to which the 2N3055 is connected.

Manufacturers rarely specify the V CES voltage rating for the 2N3055. Sometimes the 100 V CBO breakdown voltage (the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits) is given as the only voltage rating, which can cause confusion. The maximum collector-to-emitter voltage for the 2N3055, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor with 100 ohms a 70 volt breakdown rating, V CER, and the Collector-Emitter Sustaining voltage, V CEO(sus), is given by ON Semiconductor. The frequency at which gain begins to drop off may be much lower, see below.ДўN3055 transistor internals. It often has a transition frequency of around 3.0В MHz and 6В MHz is typical for the 2N3055A at this frequency the calculated current gain (beta) drops to 1, indicating the transistor can no longer provide useful amplification in common emitter configuration. Packaged in a TO-3 case style, it is a 15 amp, 60 volt (or more, see below), 115 watt power transistor with a ОІ (forward current gain) of 20 to 70 at a collector current of 4 A (this may be over 100 when testing at lower currents ). Operating Junction Temperature (Tj): 200 вЊ Transition Frequency (ft): 0.The exact performance characteristics depend on the manufacturer and date before the move to the epitaxial base version in the mid-1970s the f T could be as low as 0.8В MHz, for example. What are the technical specifications of the n3055? ДўN3055 Datasheet, Equivalent, Cross Reference Search.The collector-to-emitter voltage is the maximum amount of voltage capacity of the 2n3055, 1 вЂ“ 60 v is the range of voltage, and 7-ampere base current. What is the maximum voltage capacity of the 2N3055?.

TO3 package is only used for power transistors, they had the advantage of high durability, and the metal can protect the device from the environment. The TO3 packaging is the main specialty of the 2n3055 transistor, the outer covering of the transistor is using a metal Can, due to this transistor is capable of high power dissipation.

What is the TO3 packaging of a 2N3055 transistor?.

UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case.

2N3055 Silicon NPN Power Transistor Audio Power Amp ДўN3055 Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TOв€’3 Type Package Description: The 2N3055 is a silicon NPN transistor in a TO3 type case designed for вЂ¦.

2N3055 Datasheet(PDF) - Motorola, Inc ДЎ5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS, 2N3055 datasheet, 2N3055 circuit, 2N3055 data sheet : MOTOROLA, alldatasheet, вЂ¦.

2N3055 - SILICON NPN TRANSISTOR ДўN3055 SILICON NPN TRANSISTOR SGS-THOMSONPREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in JedecTO-3 вЂ¦.

2N3055 (NPN), MJ2955 (PNP) - Complementary вЂ¦ ДўN3055/D 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for generalв€’purpose вЂ¦.

What is a 2n3055 transistor used for